MMBT4124LT1G - onsemi

Manufacturer Part Number

MMBT4124LT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

Surface Mount Package (SOT-23-3)

Power Rating: 225 mW

Collector-Emitter Breakdown Voltage (Max): 25 V

Collector Current (Max): 200 mA

Collector Cutoff Current (Max): 50 nA

Collector-Emitter Saturation Voltage (Max): 300 mV

DC Current Gain (hFE) (Min): 120

Transition Frequency: 300 MHz

Product Advantages

Compact surface mount package

Good power handling capability

High breakdown voltage

High current handling capacity

Low collector cutoff current

High DC current gain

High frequency performance

Key Technical Parameters

Package: SOT-23-3 (TO-236)

Mounting Type: Surface Mount

Operating Temperature: -55°C to 150°C

RoHS Compliance: ROHS3 Compliant

Quality and Safety Features

Reliable performance under high temperature and high power conditions

Compliance with RoHS environmental regulations

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Amplifiers

Switches

Logic gates

Driver circuits

General-purpose electronics

Product Lifecycle

Current production model

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Compact and efficient surface mount package

Excellent power handling and high voltage capability

High current capacity and low collector cutoff current

High DC current gain and high frequency performance

Reliable operation in high temperature and high power applications

Compliance with RoHS environmental regulations