MMBT3906WT1G - onsemi

Manufacturer Part Number

MMBT3906WT1G

Manufacturer

onsemi

Introduction

General-purpose PNP bipolar junction transistor

Product Features and Performance

Operating temperature range: -55°C to 150°C

Power dissipation: 150mW

Collector-emitter breakdown voltage: 40V

Collector current: 200mA

Collector-emitter saturation voltage: 400mV @ 5mA, 50mA

DC current gain: 100 min. @ 10mA, 1V

Transition frequency: 250MHz

Surface mount package: SC-70-3 (SOT323)

Product Advantages

Wide operating temperature range

High power handling capability

Low collector-emitter saturation voltage

High DC current gain

High transition frequency

Compact surface mount package

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 40V

Current Collector (Ic) (Max): 200mA

Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V

Frequency Transition: 250MHz

Quality and Safety Features

RoHS3 compliant

Reliable performance in a wide range of applications

Compatibility

Compatible with various electronic devices and circuits requiring a general-purpose PNP bipolar junction transistor

Application Areas

Amplifiers

Switches

Biasing circuits

Logic gates

Analog and digital circuits

Product Lifecycle

Currently in active production

Replacements and upgrades may be available in the future

Several Key Reasons to Choose This Product

Wide operating temperature range (-55°C to 150°C)

High power handling capability (150mW)

Low collector-emitter saturation voltage (400mV)

High DC current gain (100 min.)

High transition frequency (250MHz)

Compact surface mount package (SC-70-3)

RoHS3 compliance for environmental friendliness