Manufacturer Part Number
MMBT3416LT3G
Manufacturer
onsemi
Introduction
NPN Bipolar Junction Transistor (BJT)
Small-signal transistor for general-purpose applications
Product Features and Performance
Collector-Emitter Breakdown Voltage: 40V (max)
Collector Current: 100mA (max)
Power Dissipation: 225mW (max)
Operating Temperature Range: -55°C to 150°C
High DC Current Gain: 75 (min) at 2mA, 4.5V
Low Collector-Emitter Saturation Voltage: 300mV (max) at 3mA, 50mA
Product Advantages
Suitable for a wide range of general-purpose amplifier and switching applications
Compact surface-mount package (SOT-23-3)
Reliable and robust design
RoHS-compliant
Key Technical Parameters
Package: TO-236-3, SOT-23-3
Transistor Type: NPN
Collector-Emitter Breakdown Voltage: 40V (max)
Collector Current: 100mA (max)
Power Dissipation: 225mW (max)
Operating Temperature Range: -55°C to 150°C
DC Current Gain: 75 (min) at 2mA, 4.5V
Collector-Emitter Saturation Voltage: 300mV (max) at 3mA, 50mA
Quality and Safety Features
RoHS-compliant design
Reliable and durable construction
Compatibility
Suitable for a wide range of electronic devices and circuits
Application Areas
General-purpose amplifier and switching applications
Consumer electronics
Industrial control systems
Telecommunications equipment
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacements and upgrades may be available from onsemi or other manufacturers.
Key Reasons to Choose This Product
Reliable and robust design for long-term performance
Compact surface-mount package for efficient PCB integration
Wide operating temperature range for diverse applications
High DC current gain and low saturation voltage for optimal performance
RoHS-compliant for environmental compliance