MMBT2907AWT1G - onsemi

Manufacturer Part Number

MMBT2907AWT1G

Manufacturer

onsemi

Introduction

The MMBT2907AWT1G is a PNP bipolar junction transistor (BJT) in a small surface-mount SC-70-3 (SOT-323) package.

Product Features and Performance

Operates in the -55°C to 150°C temperature range

Maximum power dissipation of 150 mW

Collector-emitter breakdown voltage up to 60 V

Maximum collector current of 600 mA

Typical DC current gain (hFE) of 100 at 150 mA and 10 V

Transition frequency up to 200 MHz

Product Advantages

Compact and space-saving SC-70-3 (SOT-323) package

RoHS-compliant and halogen-free for environmentally-conscious applications

High-performance PNP transistor suitable for various analog and switching circuits

Key Technical Parameters

Power Max: 150 mW

Voltage Collector Emitter Breakdown (Max): 60 V

Current Collector (Ic) (Max): 600 mA

Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V

Frequency Transition: 200MHz

Quality and Safety Features

RoHS3 compliant

Halogen-free package

Compatibility

Surface mount

Tape & reel packaging

Application Areas

Analog and switching circuits

General-purpose PNP transistor applications

Product Lifecycle

Currently in production

Replacement or upgrade options available if needed

Several Key Reasons to Choose This Product

Compact and space-saving SC-70-3 (SOT-323) package

Wide operating temperature range of -55°C to 150°C

High power and current handling capabilities

Excellent high-frequency performance up to 200 MHz

RoHS-compliant and halogen-free for environmental considerations

Availability of replacement or upgrade options if required