Manufacturer Part Number
MMBF4393
Manufacturer
onsemi
Introduction
Obsolete N-Channel JFET transistor designed for signal amplification and switching
Product Features and Performance
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20 V
Resistance - RDS(On): 100 Ohms
Power - Max: 350 mW
Operating Temperature Range: -55°C to 150°C
Product Advantages
High breakdown voltage capability
Low cutoff voltage
Suitable for high-temperature applications
Key Technical Parameters
Voltage - Breakdown: 30 V
Current - Drain: 5 mA at 20 V
Voltage - Cutoff: 500 mV at 1 nA
Input Capacitance: 14pF at 20V
Resistance - RDS(On): 100 Ohms
Power - Max: 350 mW
Quality and Safety Features
Offering reliable performance at temperatures ranging from -55°C to 150°C
Compatibility
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Application Areas
Used in signal amplification and switching before becoming obsolete
Product Lifecycle
Obsolete status
Alternative or replacement products may be available
Several Key Reasons to Choose This Product
Reliability in high temperature environments up to 150°C
Low voltage operation suitable for low-power applications
Compact surface-mount package for space-sensitive designs
Historically utilized in a variety of electronic circuits before discontinuation
MMBF4856LT1GAMI Semiconductor/onsemi
MMBF4860Fairchild (onsemi)