Manufacturer Part Number
MMBF4392LT1G
Manufacturer
onsemi
Introduction
JFET N-Channel Transistor designed for high-performance switching applications.
Product Features and Performance
N-Channel JFET
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
Resistance - RDS(On): 60 Ohms
Power - Max: 225 mW
Operating Temperature Range: -55°C ~ 150°C (TJ)
Product Advantages
High cutoff frequency for RF applications
Low noise when used in amplifier circuits
Efficient power handling
High breakdown voltage
Key Technical Parameters
Surface Mount Package Type
Packaging in Tape & Reel (TR) for automated assembly
Product Status: Active, indicating ongoing manufacturing and availability
Quality and Safety Features
High thermal performance with operating temperatures ranging from -55°C to 150°C
Compliance with ROHS and Lead (Pb)-Free specifications for environmental safety
Compatibility
Compatible with SOT-23-3 (TO-236) standardized mounting and footprint for easy integration
Suited for analog switch and amplifier applications
Application Areas
RF Amplifiers
Switching Applications
Audio Amplifiers
Signal Processing
Product Lifecycle
Active status with no indication of discontinuation
Availability for replacements or potential upgrades persists
Several Key Reasons to Choose This Product
Reliability and longevity in high-performance applications
Suitable for advanced electronic circuits
Adherence to industry standards for quality and safety
Broad application utility within electronics
onsemi's reputation for manufacturing excellence