Manufacturer Part Number
MJE18004G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
TO-220 Package
Operating Temperature: -65°C to 150°C
Power Rating: 75W
Collector-Emitter Breakdown Voltage: 450V
Collector Current: 5A
Collector Cutoff Current: 100A
Collector-Emitter Saturation Voltage: 750mV @ 500mA, 2.5A
DC Current Gain: 14 @ 300mA, 5V
Transition Frequency: 13MHz
Product Advantages
High voltage and power handling capability
Reliable performance in switching applications
Suitable for various power electronics circuits
Key Technical Parameters
Transistor Type: NPN
Package: TO-220-3
Mounting Type: Through Hole
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power electronics circuits
Switching applications
Power supplies
Motor drives
Inverters
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High voltage and power handling capability
Reliable performance in switching applications
Suitable for a wide range of power electronics circuits
RoHS3 compliance for environmental responsibility