MJE181STU - onsemi

Manufacturer Part Number

MJE181STU

Manufacturer

onsemi

Introduction

The MJE181STU is a high-voltage, high-current NPN bipolar junction transistor (BJT) designed for a variety of power switching and amplification applications.

Product Features and Performance

Capable of handling up to 60V collector-emitter voltage

Rated for up to 3A of collector current

Transition frequency of 50MHz

High current gain (hFE) of at least 50 at 100mA, 1V

Low collector-emitter saturation voltage of 1.7V at 600mA, 3A

Product Advantages

Robust and reliable performance

Suitable for a wide range of power switching and amplification needs

Cost-effective solution for power electronics applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 60V

Collector Current (IC): 3A

Power Dissipation (Pd): 1.5W

Operating Temperature Range: -55°C to +150°C

Quality and Safety Features

RoHS3 compliant

TO-126-3 package for reliable thermal management and electrical connectivity

Compatibility

Widely used in various power electronics circuits and systems

Application Areas

Power supplies

Motor controls

Inverters

Regulators

Amplifiers

Product Lifecycle

The MJE181STU is an established and well-supported product in onsemi's portfolio.

Replacement or upgraded options may be available, depending on specific application requirements.

Key Reasons to Choose This Product

Proven reliability and performance

Suitable for a broad range of power electronics applications

Cost-effective solution

Readily available in the market