MBRD660CTT4G - onsemi

Manufacturer Part Number

MBRD660CTT4G

Manufacturer

onsemi

Introduction

High-performance Schottky rectifier diode array

Ideal for use in power supplies, converters, and other power management applications

Product Features and Performance

Fast recovery time of ≤ 500 ns

High forward current capability of 3 A per diode

Low forward voltage drop of 700 mV at 3 A

Reverse voltage rating of 60 V

Operating temperature range of -65°C to 175°C

Product Advantages

Excellent efficiency and thermal performance

Compact DPAK package for space-saving designs

Suitable for high-frequency switching applications

Robust and reliable construction

Key Technical Parameters

Reverse Leakage Current: 100 μA @ 60 V

Forward Voltage: 700 mV @ 3 A

Recovery Time: ≤ 500 ns

Average Rectified Current: 3 A per diode

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of power electronics applications

Application Areas

Power supplies

Converters

Power management circuits

Industrial and automotive electronics

Product Lifecycle

Current production model, no discontinuation planned

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

Excellent efficiency and thermal performance

Fast recovery time for high-frequency applications

Compact DPAK package for space-saving designs

Robust and reliable construction for long-term use

Compliance with RoHS3 regulations