MBRD660CTT4 - onsemi

Manufacturer Part Number

MBRD660CTT4

Manufacturer

ON Semiconductor

Introduction

High-performance Schottky rectifier diode array

Ideal for use in power supplies, inverters, and other power conversion applications

Product Features and Performance

Fast recovery time of ≤ 500 ns

High average rectified current of 3 A per diode

Low forward voltage drop of 700 mV at 3 A

Wide operating temperature range of -65°C to 175°C

Schottky barrier technology for efficient power conversion

Product Advantages

Efficient power conversion with low conduction losses

High-speed operation for high-frequency applications

Compact DPAK package for space-saving designs

Robust thermal performance across wide temperature range

Key Technical Parameters

Reverse Voltage (VR): 60 V

Forward Voltage (VF): 700 mV @ 3 A

Reverse Leakage Current (IR): 100 μA @ 60 V

Recovery Time (trr): ≤ 500 ns

Quality and Safety Features

RoHS non-compliant

DPAK package for secure surface-mount assembly

Compatibility

Suitable for use in power supplies, inverters, and other power conversion applications

Application Areas

Power supplies

Inverters

Motor drives

Industrial electronics

Automotive electronics

Product Lifecycle

Active product

Replacement or upgrade options available

Key Reasons to Choose This Product

Efficient power conversion with low conduction losses

High-speed operation for high-frequency applications

Robust thermal performance across wide temperature range

Compact DPAK package for space-saving designs

Reliable and proven Schottky rectifier technology