MBR8H100MFST1G - onsemi

Manufacturer Part Number

MBR8H100MFST1G

Manufacturer

onsemi

Introduction

High-performance Schottky diode with fast reverse recovery time and low forward voltage drop.

Product Features and Performance

Fast reverse recovery time ≤ 500 ns

Low forward voltage drop of 900 mV @ 8 A

High reverse voltage rating of 100 V

High average rectified current of 8 A

Operating temperature range of -55°C to 175°C

Schottky barrier technology for enhanced efficiency

Product Advantages

Improved power conversion efficiency

Reduced switching losses

Compact surface mount package

Reliable performance in high-power applications

Key Technical Parameters

Reverse Voltage (VR): 100 V

Forward Voltage (VF): 900 mV @ 8 A

Reverse Leakage Current (IR): 2 A @ 100 V

Reverse Recovery Time (trr): ≤ 500 ns

Average Rectified Current (IO): 8 A

Operating Temperature Range: -55°C to 175°C

Quality and Safety Features

RoHS3 compliant

Halogen-free

Reliable and durable construction

Compatibility

Compatible with a wide range of high-power electronics and power conversion applications

Application Areas

Switch-mode power supplies

DC-DC converters

Motor drives

Industrial and automotive electronics

Product Lifecycle

Currently available

No plans for discontinuation

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Excellent power conversion efficiency

Fast and reliable switching performance

Compact and space-saving surface mount package

Wide operating temperature range

Proven reliability and durability

Compliance with industry safety and environmental standards