Manufacturer Part Number
MBR860MFST1G
Manufacturer
onsemi
Introduction
The MBR860MFST1G is a high-performance Schottky rectifier diode in a Power TDDFN package. It is designed for use in power management and conversion applications.
Product Features and Performance
Fast recovery time of less than 500 ns
Reverse current capability up to 150 A at 60 V
Forward voltage drop as low as 800 mV at 8 A
Operating temperature range of -55°C to 175°C
Suitable for high-frequency, high-efficiency power conversion circuits
Product Advantages
Compact and low-profile Power TDDFN package
Excellent thermal performance due to exposed thermal pad
Robust design for high reliability
RoHS3 compliant
Key Technical Parameters
Voltage DC Reverse (Vr): 60 V
Current Average Rectified (Io): 8 A
Current Reverse Leakage @ Vr: 150 A @ 60 V
Voltage Forward (Vf): 800 mV @ 8 A
Recovery Time (trr): <= 500 ns
Operating Temperature Range: -55°C to 175°C
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and long-term performance
Compatibility
The MBR860MFST1G is compatible with various power conversion and management applications, including but not limited to:
Switch-mode power supplies
DC-DC converters
Power factor correction circuits
Motor drives
Uninterruptible power supplies (UPS)
Application Areas
Power management and conversion
Industrial electronics
Telecommunications equipment
Automotive electronics
Product Lifecycle
The MBR860MFST1G is an active product and is currently available for purchase. There are no immediate plans for discontinuation, and onsemi offers replacement or upgrade options as needed.
Key Reasons to Choose This Product
High-performance Schottky rectifier with fast recovery time and low forward voltage drop
Compact and thermally efficient Power TDDFN package
Robust design for high reliability and long-term performance
Suitable for a wide range of power conversion and management applications
RoHS3 compliance for environmentally-friendly use