Manufacturer Part Number
KSC1623LMTF
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
Surface Mount Packaging (SOT-23-3)
High Power Capability (200 mW)
High Voltage Handling (50 V Collector-Emitter Breakdown Voltage)
High Current Capability (100 mA Collector Current)
Low Collector Cutoff Current (100 nA ICBO)
Low Collector-Emitter Saturation Voltage (300 mV @ 10 mA, 100 mA)
High DC Current Gain (300 hFE @ 1 mA, 6 V)
High Frequency Operation (250 MHz Transition Frequency)
Product Advantages
Compact Surface Mount Package
High Power and Voltage Handling
High Current Capability
Low Saturation Voltage
High Current Gain
High Frequency Performance
Key Technical Parameters
Package: SOT-23-3
Operating Temperature: 150°C (TJ)
Power Rating: 200 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current: 100 mA
Collector Cutoff Current: 100 nA
Collector-Emitter Saturation Voltage: 300 mV @ 10 mA, 100 mA
DC Current Gain: 300 @ 1 mA, 6 V
Transition Frequency: 250 MHz
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic circuits and applications requiring a high-performance NPN bipolar junction transistor
Application Areas
Amplifiers
Switches
Drivers
Logic Circuits
Power Management
General-purpose electronics
Product Lifecycle
The KSC1623LMTF is an active and widely available product from onsemi.
Key Reasons to Choose This Product
Compact Surface Mount Packaging
High Power and Voltage Handling Capability
High Current Capability
Low Saturation Voltage for Efficient Operation
High Current Gain for Improved Circuit Performance
High Frequency Operation for High-Speed Applications
RoHS3 Compliance for Environmental Sustainability
KSC1623 400-600CJ
KSC1623-Y-TFSamsung Semiconductor
KSC1623YMTFonsemiTRANS NPN 50V 0.1A SOT23-3
KSC1674CYBUonsemiRF TRANS NPN 20V 600MHZ TO92-3
KSC1507YTUonsemiTRANS NPN 300V 200UA TO220-3