Manufacturer Part Number
KSC1623GMTF
Manufacturer
onsemi
Introduction
The KSC1623GMTF is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications.
Product Features and Performance
Optimized for high-frequency, high-speed switching and amplification applications
Low collector-emitter saturation voltage for efficient operation
High transition frequency of 250 MHz
Wide collector-emitter breakdown voltage of 50 V
High DC current gain of 200 at 1 mA, 6 V
Low collector cutoff current of 100 nA
200 mW power dissipation capability
Product Advantages
Excellent high-frequency performance
Efficient power handling
Robust design for reliable operation
Versatile for a wide range of applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 100 mA
Collector Cutoff Current: 100 nA
DC Current Gain: 200 min @ 1 mA, 6 V
Transition Frequency: 250 MHz
Power Dissipation: 200 mW
Quality and Safety Features
RoHS3 compliant
Housed in a compact SOT-23-3 surface mount package
Reliable performance within the specified operating temperature range of -55°C to +150°C
Compatibility
Suitable for use in various electronic circuits, including amplifiers, switches, and logic gates
Application Areas
Widely used in consumer electronics, industrial equipment, and telecommunications applications
Suitable for high-frequency, high-speed switching and amplification circuits
Product Lifecycle
This product is currently in active production and available for purchase
Replacement or upgrade options may be available from the manufacturer or authorized distributors
Key Reasons to Choose This Product
Excellent high-frequency performance for efficient circuit operation
Robust design and wide operating temperature range for reliable performance
Efficient power handling and low saturation voltage for energy-efficient applications
Versatile compatibility with a wide range of electronic circuits and systems
RoHS3 compliance for use in environmentally conscious applications