KSA1281YTA - onsemi

Manufacturer Part Number

KSA1281YTA

Manufacturer

onsemi

Introduction

PNP Bipolar Junction Transistor (BJT)

Designed for general-purpose amplifier and switching applications

Product Features and Performance

Operates at high temperatures up to 150°C

High power handling capability of up to 1W

High collector-emitter breakdown voltage of up to 50V

High collector current handling of up to 2A

High DC current gain of at least 120 at 500mA and 2V

High transition frequency of 100MHz

Product Advantages

Robust design for harsh environments

Efficient high-power performance

Versatile for a wide range of applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 50V

Collector Current: 2A

DC Current Gain: 120 (min)

Transition Frequency: 100MHz

Power Dissipation: 1W

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Meets industrial quality and reliability standards

Compatibility

Compatible with TO-92-3 and TO-226-3 package footprints

Application Areas

General-purpose amplifier and switching circuits

Power electronics and control systems

Industrial, automotive, and consumer electronics

Product Lifecycle

Currently in active production

Replacement or upgrade options available

Key Reasons to Choose This Product

Excellent high-power and high-temperature performance

Robust and reliable design for industrial applications

Versatile compatibility with common package footprints

Cost-effective solution for general-purpose transistor needs