Manufacturer Part Number
KSA1220AYS
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
Through Hole Mounting
TO-126 Package
Operating Temperature: 150°C (TJ)
Power Rating: 1.2 W
Collector-Emitter Breakdown Voltage: 160 V
Collector Current (Max): 1.2 A
Collector Cutoff Current (Max): 1 A
Collector-Emitter Saturation Voltage: 700 mV @ 200 mA, 1 A
Transistor Type: PNP
DC Current Gain (Min): 160 @ 300 mA, 5 V
Transition Frequency: 175 MHz
Product Advantages
Reliable performance
Compact and efficient design
Wide operating temperature range
Key Technical Parameters
Voltage, Current, Power, and Frequency Ratings
Transistor Type and DC Current Gain
Quality and Safety Features
RoHS3 Compliant
Compatibility
TO-126 Package
Application Areas
General-purpose transistor applications
Analog and digital circuits
Power amplifiers
Switching circuits
Product Lifecycle
Current product offering, no discontinuation information available
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Reliable and robust performance
Compact and efficient design
Wide operating temperature range
RoHS3 compliance for environmental sustainability