Manufacturer Part Number
FQT1N60CTF-WS
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device, specifically a transistor - field-effect transistor (FET), metal-oxide-semiconductor field-effect transistor (MOSFET), single.
Product Features and Performance
600V Drain-to-Source Voltage
±30V Gate-to-Source Voltage
5Ω On-State Resistance @ 100mA, 10V
200mA Continuous Drain Current @ 25°C
170pF Input Capacitance @ 25V
1W Power Dissipation
N-Channel FET
4V Gate Threshold Voltage @ 250μA
10V Drive Voltage for Maximum/Minimum On-State Resistance
2nC Gate Charge @ 10V
Product Advantages
Suitable for high-voltage applications
Low on-state resistance
Capable of handling high continuous drain current
Compact surface-mount package
Key Technical Parameters
Drain-to-Source Voltage: 600V
Gate-to-Source Voltage: ±30V
On-State Resistance: 11.5Ω @ 100mA, 10V
Continuous Drain Current: 200mA @ 25°C
Input Capacitance: 170pF @ 25V
Power Dissipation: 2.1W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature environments (-55°C to 150°C)
Compatibility
Surface-mount package: SOT-223-4
Replacement for MOSFET transistors in various applications
Application Areas
High-voltage power supplies
Switching circuits
Motor control
Lighting and industrial applications
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacements and upgrades may be available from the manufacturer or third-party suppliers.
Key Reasons to Choose This Product
High voltage rating of 600V
Low on-state resistance for efficient power switching
Capable of handling high continuous drain current
Compact surface-mount package for space-constrained designs
Suitable for high-temperature environments
RoHS3 compliance for environmental safety
FQT13N06TF MOSFairchild (onsemi)