Manufacturer Part Number
FQT13N06TF
Manufacturer
onsemi
Introduction
N-channel MOSFET transistor
Suitable for power switching applications
Product Features and Performance
Drain-to-source voltage (Vdss) of 60V
Maximum gate-to-source voltage (Vgs) of ±25V
On-state resistance (Rds(on)) of 140mΩ at 1.4A and 10V
Continuous drain current (Id) of 2.8A at 25°C
Input capacitance (Ciss) of 310pF at 25V
Power dissipation of 2.1W at case temperature (Tc)
Gate charge (Qg) of 7.5nC at 10V
Product Advantages
Low on-state resistance for high efficiency
Fast switching speed for power conversion applications
Compact surface mount package
Key Technical Parameters
MOSFET technology
N-channel enhancement mode
Vdss: 60V
Vgs (max): ±25V
Rds(on) (max): 140mΩ
Id (continuous): 2.8A at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Operating temperature range: -55°C to 150°C
Compatibility
Compatible with various power supply and motor control applications
Application Areas
Power switching
Motor control
Power conversion
General purpose power electronics
Product Lifecycle
Current product, no discontinuation plans
Replacements and upgrades available from onsemi
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Compact and easy to integrate surface mount package
Reliable and proven MOSFET technology
Wide operating temperature range
RoHS compliance for environmental friendliness
FQT3P20 MOSFairchild (onsemi)