Manufacturer Part Number
FQPF6N60C
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
600V Drain to Source Voltage (Vdss)
5A Continuous Drain Current (Id) at 25°C
2Ω Maximum On-State Resistance (Rds(on)) at 2.75A, 10V
810pF Maximum Input Capacitance (Ciss) at 25V
40W Maximum Power Dissipation at Tc
Product Advantages
High Voltage Capability
Low On-State Resistance
Compact TO-220 Package
Key Technical Parameters
Operating Temperature Range: -55°C to 150°C
Gate-Source Voltage (Vgs) Maximum: ±30V
Threshold Voltage (Vgs(th)) Maximum: 4V at 250μA
Gate Charge (Qg) Maximum: 20nC at 10V
Quality and Safety Features
MOSFET Technology
Through Hole Mounting
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power Conversion
Motor Control
Inverters
Switching Power Supplies
Product Lifecycle
This product is an active and commonly used MOSFET transistor
Replacements and upgrades are readily available
Key Reasons to Choose This Product
High voltage capability up to 600V
Low on-state resistance for efficient power conversion
Compact TO-220 package for space-constrained designs
Reliable MOSFET technology with extensive application support
