Manufacturer Part Number
FQPF6N60
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
N-Channel MOSFET
600V Drain to Source Voltage
5Ω Rds(on) @ 1.8A, 10V
6A Continuous Drain Current @ 25°C
1000pF Input Capacitance @ 25V
44W Power Dissipation @ Tc
-55°C to 150°C Operating Temperature
Product Advantages
High voltage and low on-resistance
Suitable for high power switching applications
Key Technical Parameters
Vdss: 600V
Vgs(Max): ±30V
Rds(on)(Max): 1.5Ω
Id(Cont) @ 25°C: 3.6A
Ciss(Max) @ 25V: 1000pF
Pd(Max) @ Tc: 44W
Quality and Safety Features
TO-220F-3 package
Through-hole mounting
MOSFET technology
Compatibility
Compatible with a wide range of high power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose
High voltage and low on-resistance for efficient power switching
Suitable for high power applications
Reliable performance over wide temperature range
Established MOSFET technology
Compatibility with various power electronics designs