Manufacturer Part Number
FQPF5N60C
Manufacturer
onsemi
Introduction
High voltage, high-efficiency N-channel power MOSFET
Product Features and Performance
600V drain-to-source voltage
Low on-state resistance (2.5Ω max at 2.25A, 10V)
Low gate charge (19nC max at 10V)
Fast switching speed
Rugged avalanche rated
Suitable for high frequency and high efficiency power conversion
Product Advantages
Excellent power handling capability
Efficient power conversion
Reliable performance
Suitable for high frequency applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Gate-to-source voltage (Vgs): ±30V
Continuous drain current (Id): 4.5A at 25°C
On-state resistance (Rds(on)): 2.5Ω max at 2.25A, 10V
Input capacitance (Ciss): 670pF max at 25V
Power dissipation (Pd): 33W at Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high temperature operation (-55°C to 150°C)
Compatibility
Through-hole mounting
TO-220-3 package
Application Areas
High frequency and high efficiency power conversion
Switching power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose
High voltage and current handling
Low on-state resistance for efficient power conversion
Fast switching speed for high frequency applications
Rugged design for reliable performance
RoHS compliance and high temperature operation
FQPF5N60/KELI5N60KEL