Manufacturer Part Number
FQPF5N60
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET transistor suitable for a wide range of power conversion and control applications.
Product Features and Performance
Extremely low on-resistance for high efficiency
Capable of handling high voltage up to 600V
Low gate charge for fast switching
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency due to ultra-low on-resistance
Reliable operation in high voltage applications
Fast switching for high-frequency power conversion
Suitable for use in harsh environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Maximum Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 2Ω @ 1.4A, 10V
Continuous Drain Current (Id): 2.8A @ 25°C
Input Capacitance (Ciss): 730pF @ 25V
Power Dissipation (Tc): 40W
Quality and Safety Features
Rugged and reliable construction
Compliant with relevant safety standards
Compatibility
Through-hole mounting in TO-220 package
Application Areas
Switch-mode power supplies
Motor drives
Inverters and converters
Industrial automation and control
Home appliances
Product Lifecycle
This product is currently in active production
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Exceptional power efficiency due to ultra-low on-resistance
Capable of handling high voltages up to 600V
Fast switching for high-frequency power conversion
Wide operating temperature range for use in harsh environments
Reliable and rugged construction for long-term operation
FQPF5N50/KELI830KEL
FQPF5N60Fairchild SemiconductorMOSFET N-CH 600V 2.8A TO220F