Manufacturer Part Number
FQP5N60C
Manufacturer
onsemi
Introduction
High-performance N-Channel Power MOSFET
Product Features and Performance
600V Drain-Source Voltage
5A Continuous Drain Current
5Ω On-Resistance
670pF Input Capacitance
19nC Gate Charge
Operating Temperature: -55°C to 150°C
Product Advantages
Efficient power switching performance
Robust and reliable design
Suitable for a wide range of power conversion applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Maximum Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 2.5Ω @ 2.25A, 10V
Continuous Drain Current (Id): 4.5A @ 25°C
Input Capacitance (Ciss): 670pF @ 25V
Power Dissipation (Pd): 100W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Robust TO-220-3 package
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
Currently in production. Replacements or upgrades may be available in the future.
Key Reasons to Choose This Product
Excellent power switching performance
Reliable and robust design
Wide operating temperature range
Suitable for high-voltage, high-current applications
RoHS3 compliance for environmental responsibility