Manufacturer Part Number
FQP5N50C
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET with low on-resistance and high-voltage capability.
Product Features and Performance
Low on-resistance (Rds(on) of 1.4Ω) for efficient power conversion
High voltage capability (500V drain-to-source voltage)
High continuous drain current (5A at 25°C)
Fast switching speed and low gate charge for efficient operation
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent efficiency and low power losses
Reliable high-voltage operation
Suitable for a variety of power conversion applications
Robust design for harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.4Ω @ 2.5A, 10V
Continuous Drain Current (Id): 5A @ 25°C
Input Capacitance (Ciss): 625pF @ 25V
Power Dissipation: 73W
Quality and Safety Features
Robust TO-220-3 package for reliable performance
Stringent quality control and testing processes
Compliance with relevant safety and environmental standards
Compatibility
Compatible with a wide range of power electronics and power conversion applications
Application Areas
Switching power supplies
Motor drives
Inverters and converters
Industrial and consumer electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacements and upgrades may be available from onsemi as technology evolves.
Key Reasons to Choose This Product
Excellent efficiency and low power losses for improved energy savings
Reliable high-voltage operation for demanding applications
Versatile compatibility and suitability for a wide range of power conversion needs
Robust design and quality construction for long-lasting performance
Availability of technical support and resources from the manufacturer
