Manufacturer Part Number
FQP12P20
Manufacturer
onsemi
Introduction
High-performance P-channel MOSFET transistor
Suitable for a wide range of power conversion and control applications
Product Features and Performance
Operating temperature range: -55°C to 150°C
Drain to source voltage (Vdss): 200V
Maximum gate-source voltage (Vgs): ±30V
Maximum on-resistance (Rds(on)): 470mΩ @ 5.75A, 10V
Continuous drain current (Id): 11.5A @ 25°C
Input capacitance (Ciss): 1200pF @ 25V
Maximum power dissipation: 120W
Product Advantages
Low on-resistance for high efficiency
Fast switching capability
High voltage rating
Robust and reliable design
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET type: P-channel
Threshold voltage (Vgs(th)): 5V @ 250A
Gate charge (Qg): 40nC @ 10V
Drive voltage range: 10V
Quality and Safety Features
RoHS3 compliant
Hermetically sealed TO-220-3 package
Compatibility
Through-hole mounting
Suitable for a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial controls
Product Lifecycle
Current product, no plans for discontinuation
Replacements and upgrades available
Several Key Reasons to Choose This Product
High efficiency and low power losses due to low on-resistance
Robust and reliable design for long-term performance
Suitable for a wide range of power applications
RoHS3 compliance for environmental responsibility
Availability of replacements and upgrades for long-term support
