Manufacturer Part Number
FQP12N60C
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
Optimized for high-frequency, high-efficiency switching applications
Low on-resistance for low conduction losses
High-speed switching for improved efficiency
Rugged and reliable design
Product Advantages
Excellent thermal performance
High power density
Robust design for harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vds): 600V
Maximum Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 650mΩ @ 6A, 10V
Continuous Drain Current (Id): 12A @ 25°C
Input Capacitance (Ciss): 2290pF @ 25V
Power Dissipation (Pd): 225W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Compatibility
Compatible with various high-frequency, high-efficiency switching applications
Application Areas
Switch-mode power supplies (SMPS)
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available
Several Key Reasons to Choose This Product
Excellent thermal performance and high power density for efficient operation
Robust design for reliable performance in harsh environments
Optimized for high-frequency, high-efficiency switching applications
Proven reliability and quality from onsemi