Manufacturer Part Number
FQP11N40
Manufacturer
onsemi
Introduction
The FQP11N40 is a high-performance N-channel power MOSFET transistor designed for a wide range of power switching applications.
Product Features and Performance
High drain-source breakdown voltage of 400V
Low on-state resistance of 480mΩ @ 5.7A, 10V
High continuous drain current of 11.4A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 35nC @ 10V
Rugged design and reliable performance
Product Advantages
Excellent power handling capability
Efficient power conversion and high energy efficiency
Wide temperature range for versatile applications
Robust design for reliable operation
Fast switching for high-frequency power conversion
Key Technical Parameters
Drain-Source Voltage (Vdss): 400V
Gate-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 480mΩ @ 5.7A, 10V
Continuous Drain Current (Id): 11.4A @ 25°C
Input Capacitance (Ciss): 1400pF @ 25V
Power Dissipation (Tc): 147W
Quality and Safety Features
Compliant with RoHS and other safety standards
Rigorous quality control and testing procedures
Reliable and durable construction
Compatibility
Suitable for a wide range of power switching applications
Compatible with various power supply and control systems
Application Areas
Switching power supplies
Motor drives
Inverters and converters
Industrial automation and control
Automotive electronics
Product Lifecycle
The FQP11N40 is an actively supported product
Replacement or upgrade options are available if needed
Key Reasons to Choose This Product
Excellent power handling and efficiency
Wide operating temperature range
Fast switching and low gate charge for high-frequency use
Robust and reliable design for demanding applications
Compatibility with various power systems and electronics