Manufacturer Part Number
FQP10N60C
Manufacturer
onsemi
Introduction
Power MOSFET transistor with N-Channel, through-hole TO-220-3 package
Product Features and Performance
Voltage rating up to 600 V
Low on-resistance of 730 mΩ at 4.75 A, 10 V
Continuous drain current of 9.5 A at 25°C (Tc)
Wide operating temperature range of -55°C to 150°C (TJ)
Input capacitance of 2040 pF at 25 V
Maximum power dissipation of 156 W at Tc
Product Advantages
Robust and reliable design
Efficient power handling
Wide voltage and current capabilities
Suitable for various power conversion and motor control applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600 V
Gate-to-Source Voltage (Vgs): ±30 V
Threshold Voltage (Vgs(th)): 4 V at 250 A
On-Resistance (Rds(on)): 730 mΩ at 4.75 A, 10 V
Quality and Safety Features
Compliant with relevant safety and quality standards
Robust construction for reliable operation
Compatibility
Suitable for a wide range of power electronics and motor control applications
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range
Reliable and robust design
Compatibility with various power electronics applications
