Manufacturer Part Number
FQD30N06TM
Manufacturer
onsemi
Introduction
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor
Product Features and Performance
N-Channel MOSFET
60V Drain to Source Voltage
45mΩ On-Resistance
7A Continuous Drain Current
945pF Input Capacitance
5W Power Dissipation (Ta), 44W (Tc)
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-resistance for efficient power switching
High current handling capability
Compact surface mount DPak (TO-252-3) package
Key Technical Parameters
Vdss: 60V
Vgs (Max): ±25V
Rds On (Max) @ Id, Vgs: 45mΩ @ 11.4A, 10V
Id (Continuous) @ 25°C: 22.7A (Tc)
Ciss (Max) @ Vds: 945pF @ 25V
Pd (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250A
Qg (Max) @ Vgs: 25nC @ 10V
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging
Compatibility
Can be used in a wide range of power switching and control applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Amplifiers
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Key Reasons to Choose This Product
Excellent performance with low on-resistance for efficient power switching
High current handling capability for demanding applications
Compact surface mount package for space-constrained designs
Reliable and RoHS-compliant construction
Suitable for a wide range of power electronics applications
FQD3N40FAIRCHILDRCHILD