Manufacturer Part Number
FQD10N20CTM
Manufacturer
onsemi
Introduction
The FQD10N20CTM is a N-channel enhancement-mode power MOSFET from onsemi designed for use in a wide range of power management and control applications.
Product Features and Performance
Drain-Source Voltage (Vdss) of 200V
On-Resistance (Rds(on)) of 360mΩ at 3.9A, 10V
Continuous Drain Current (Id) of 7.8A at 25°C
Input Capacitance (Ciss) of 510pF at 25V
Power Dissipation (Pd) of 50W at 25°C
Operating Temperature Range of -55°C to 150°C
Product Advantages
Efficient power switching performance
Low on-resistance for low conduction losses
High voltage rating for a wide range of applications
Robust design for reliable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 360mΩ
Continuous Drain Current (Id): 7.8A
Input Capacitance (Ciss): 510pF
Power Dissipation (Pd): 50W
Quality and Safety Features
RoHS3 compliant
Housed in a TO-252AA package
Compatibility
Surface mount package
Suitable for a wide range of power management and control applications
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Current production part
Replacements and upgrades may be available
Key Reasons to Choose This Product
Efficient power switching performance
Low on-resistance for improved efficiency
High voltage rating for versatile applications
Robust design for reliable operation
RoHS3 compliance for environmental responsibility
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