Manufacturer Part Number
FQAF11N90C
Manufacturer
onsemi
Introduction
This is a high-voltage N-channel MOSFET from onsemi, designed for power electronics and industrial applications.
Product Features and Performance
Operates at high voltage up to 900V
Low on-resistance of 1.1Ω
Continuous drain current up to 7A at 25°C
High power dissipation of 120W
Wide operating temperature range of -55°C to 150°C
Low gate charge of 80nC
Product Advantages
Excellent high-voltage performance
Low power losses and high efficiency
Robust and reliable operation
Suitable for demanding industrial applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 900V
Gate-to-Source Voltage (Vgs): ±30V
On-resistance (Rds(on)): 1.1Ω
Continuous Drain Current (Id): 7A
Power Dissipation (Ptot): 120W
Input Capacitance (Ciss): 3290pF
Quality and Safety Features
RoHS3 compliant
Suitable for through-hole mounting
Compatibility
This MOSFET is suitable for a wide range of power electronics and industrial applications.
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
This product is currently in active production and there are no plans for discontinuation. Replacement or upgrade options may become available in the future.
Key Reasons to Choose This Product
Excellent high-voltage performance
Low power losses and high efficiency
Robust and reliable operation
Wide operating temperature range
Suitable for demanding industrial applications
FQA9N90C_F109Fairchild (onsemi)