Manufacturer Part Number
FQA9N90C-F109
Manufacturer
onsemi
Introduction
High voltage N-channel MOSFET transistor in TO-3P package
Product Features and Performance
Drain-to-Source Voltage (Vdss) up to 900V
Continuous Drain Current (Id) up to 9A at 25°C
Low On-Resistance (Rds(on)) of 1.4Ω at 10V, 4.5A
Wide Operating Temperature Range of -55°C to 150°C
Low Gate Charge (Qg) of 58nC at 10V
High Power Dissipation Capability of 280W at Tc
Product Advantages
Excellent voltage handling capability
High current capacity
Low conduction losses
Robust temperature performance
Efficient switching characteristics
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 900V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.4Ω @ 4.5A, 10V
Continuous Drain Current (Id): 9A at 25°C
Input Capacitance (Ciss): 2730pF at 25V
Power Dissipation (Tc): 280W
Quality and Safety Features
RoHS3 compliant
TO-3P package for efficient heat dissipation
Compatibility
Suitable for use in a variety of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial control systems
Welding equipment
Product Lifecycle
This product is currently in production and availability is good.
Replacement or upgrade options may be available, but should be verified.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range for reliable performance
Compact and thermally efficient TO-3P package
Robust design for demanding industrial applications
FQAF16N25ConsemiMOSFET N-CH 250V 11.4A TO3PF