FQA9N90C-F109 - onsemi

Manufacturer Part Number

FQA9N90C-F109

Manufacturer

onsemi

Introduction

High voltage N-channel MOSFET transistor in TO-3P package

Product Features and Performance

Drain-to-Source Voltage (Vdss) up to 900V

Continuous Drain Current (Id) up to 9A at 25°C

Low On-Resistance (Rds(on)) of 1.4Ω at 10V, 4.5A

Wide Operating Temperature Range of -55°C to 150°C

Low Gate Charge (Qg) of 58nC at 10V

High Power Dissipation Capability of 280W at Tc

Product Advantages

Excellent voltage handling capability

High current capacity

Low conduction losses

Robust temperature performance

Efficient switching characteristics

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 900V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 1.4Ω @ 4.5A, 10V

Continuous Drain Current (Id): 9A at 25°C

Input Capacitance (Ciss): 2730pF at 25V

Power Dissipation (Tc): 280W

Quality and Safety Features

RoHS3 compliant

TO-3P package for efficient heat dissipation

Compatibility

Suitable for use in a variety of power electronics applications

Application Areas

Switching power supplies

Motor drives

Inverters

Industrial control systems

Welding equipment

Product Lifecycle

This product is currently in production and availability is good.

Replacement or upgrade options may be available, but should be verified.

Key Reasons to Choose This Product

High voltage and current handling capabilities

Low on-resistance for efficient power conversion

Wide operating temperature range for reliable performance

Compact and thermally efficient TO-3P package

Robust design for demanding industrial applications