FJX2907ATF - onsemi

Manufacturer Part Number

FJX2907ATF

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

Power Rating: 325 mW

Collector-Emitter Breakdown Voltage: 60 V

Collector Current: 600 mA

Collector Cutoff Current: 10 nA

Collector-Emitter Saturation Voltage: 1.6 V @ 50 mA, 500 mA

DC Current Gain: 100 @ 150 mA, 10 V

Transition Frequency: 200 MHz

Product Advantages

High breakdown voltage

Low collector cutoff current

Low collector-emitter saturation voltage

High DC current gain

High transition frequency

Key Technical Parameters

Transistor Type: PNP

Packaging: SC-70 (SOT-323)

Mounting Type: Surface Mount

Quality and Safety Features

Compliant with industry standards

Stringent quality control measures

Compatibility

Compatible with a wide range of electronic circuits and applications

Application Areas

Amplifiers

Switches

Logic gates

General-purpose electronics

Product Lifecycle

Currently available

No known discontinuation plans

Replacement parts and upgrades may be available

Key Reasons to Choose This Product

High performance and reliability

Compact and space-saving packaging

Suitable for a variety of electronic applications

Competitive pricing and availability