Manufacturer Part Number
FGH30S130P
Manufacturer
onsemi
Introduction
High-performance IGBT transistor designed for power electronics applications
Product Features and Performance
Trench Field Stop IGBT technology
Optimized for high efficiency and fast switching
Low on-state voltage drop and high current handling capability
High-speed switching with low switching losses
Product Advantages
Excellent thermal performance and reliability
Robust design for demanding applications
Compact and efficient power conversion
Key Technical Parameters
Collector-Emitter Voltage (VCES): 1300 V
Collector Current (IC): 60 A
Collector-Emitter Saturation Voltage (VCE(on)): 2.3 V
Gate Charge (Qg): 78 nC
Pulse Collector Current (ICM): 90 A
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable operation
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Motor drives
Inverters
Welding equipment
Uninterruptible power supplies (UPS)
Power supplies
Product Lifecycle
This product is currently in production and widely available
No known plans for discontinuation or upgrades at this time
Key Reasons to Choose This Product
High-performance IGBT with excellent efficiency and reliability
Optimized for demanding power electronics applications
Compact and robust design for reliable operation
Wide operating temperature range of -55°C to 175°C
Backed by onsemi's expertise and global support network