Manufacturer Part Number
FGH40N60SMD
Manufacturer
onsemi
Introduction
High-power insulated-gate bipolar transistor (IGBT) suitable for high-power switching applications.
Product Features and Performance
600V IGBT with field-stop technology for high-efficiency operation
80A continuous collector current rating
Low on-state voltage drop (2.5V @ 15V, 40A)
Fast switching with 36ns reverse recovery time
High power handling capability up to 349W
Product Advantages
Efficient and reliable high-power switching
Optimized for high-frequency, high-power applications
Compact TO-247-3 package for easy integration
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 80A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Reverse Recovery Time (trr): 36ns
Gate Charge: 119nC
Current Collector Pulsed (Icm): 120A
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 175°C
Compatibility
Through-hole TO-247-3 package compatible
Application Areas
High-power switching applications such as motor drives, power supplies, and inverters
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Efficient and reliable high-power switching performance
Compact and easy to integrate TO-247-3 package
Wide operating temperature range for harsh environments
RoHS3 compliance for environmental sustainability
FGH40N60SFFairchild (onsemi)