FFB2907A - onsemi

Manufacturer Part Number

FFB2907A

Manufacturer

onsemi

Introduction

Dual PNP bipolar junction transistor (BJT) array in SC-88 (SC-70-6) package

Product Features and Performance

Dual PNP transistors in a single package

Optimized for high-speed switching applications

Transition frequency (fT) of 250 MHz

Low collector-emitter saturation voltage (VCE(sat))

Tight parameter matching between transistors

Product Advantages

Space-saving dual transistor design

Improved circuit efficiency and performance

Reliable and consistent electrical characteristics

Suitable for high-speed and high-frequency applications

Key Technical Parameters

Operating temperature range: -55°C to 150°C

Maximum power dissipation: 300 mW

Collector-emitter breakdown voltage (BVCEO): 60 V

Collector current (IC): 600 mA

DC current gain (hFE): 100 (min) @ 150 mA, 10 V

Quality and Safety Features

RoHS3 compliant

Designed for reliable and consistent performance

Meets industry safety and quality standards

Compatibility

Surface mount (SMT) compatible

Suitable for various electronic circuit designs

Application Areas

Switching circuits

Amplifier circuits

Logic gates

General-purpose PNP transistor applications

Product Lifecycle

Currently in active production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Dual transistor design for space-saving and efficient circuits

High-speed switching performance with 250 MHz transition frequency

Reliable operation across wide temperature range

Consistent electrical characteristics and tight parameter matching

RoHS3 compliance for environmental responsibility