FFB2222A - onsemi

Manufacturer Part Number

FFB2222A

Manufacturer

onsemi

Introduction

Dual NPN bipolar junction transistor (BJT) array

Product Features and Performance

Operating temperature range: -55°C to 150°C

Maximum power dissipation: 300mW

Maximum collector-emitter breakdown voltage: 40V

Maximum collector current: 500mA

Maximum collector cutoff current: 10nA

Maximum collector-emitter saturation voltage: 1V @ 50mA, 500mA

Minimum DC current gain: 100 @ 150mA, 10V

Transition frequency: 300MHz

Product Advantages

Compact surface mount package (SC-88/SOT-363)

Wide operating temperature range

High breakdown voltage and collector current

Good DC current gain and high-frequency performance

Key Technical Parameters

2 NPN bipolar junction transistors in a single package

6-pin TSSOP (SC-88/SOT-363) package

Tape and reel (TR) packaging

Quality and Safety Features

Industrial-grade components

Robust design for reliable operation

Compatibility

Suitable for a variety of electronic circuit applications

Application Areas

Amplifiers

Switches

Logic gates

General-purpose electronic circuits

Product Lifecycle

Currently in production

Replacement or upgrade options available from the manufacturer

Key Reasons to Choose This Product

Compact and space-saving package

Wide operating temperature range

High-performance transistor characteristics

Reliable and robust design

Compatibility with a variety of electronic applications