Manufacturer Part Number
FDW2503N
Manufacturer
onsemi
Introduction
Dual N-Channel MOSFET with low on-resistance and high gate charge for efficient power management applications.
Product Features and Performance
20V Drain-to-Source Voltage
21mΩ On-Resistance at 5.5A Drain Current
1082pF Input Capacitance at 10V
17nC Gate Charge at 4.5V
Logic Level Gate
Operating Temperature Range: -55°C to 150°C
Product Advantages
Efficient power management with low on-resistance
Suitable for a wide range of applications with high-temperature operation
Dual configuration for space-saving designs
Key Technical Parameters
Drain-to-Source Voltage: 20V
On-Resistance: 21mΩ
Drain Current: 5.5A
Input Capacitance: 1082pF
Gate Charge: 17nC
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
Compliant with Restriction of Hazardous Substances (RoHS) directive
Suitable for lead-free soldering processes
Compatibility
Suitable for surface mount applications
Application Areas
Power management circuits
Motor control
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and available for purchase.
Replacements or upgrades may be available in the future as technology advances.
Several Key Reasons to Choose This Product
Excellent power efficiency with low on-resistance
Wide operating temperature range for reliable performance in harsh environments
Dual configuration for space-saving designs
Proven quality and safety features for industrial and consumer applications
