Manufacturer Part Number
FDW2502P
Manufacturer
onsemi
Introduction
Dual P-channel MOSFET transistor in an 8-TSSOP package
Part of the PowerTrench series
Product Features and Performance
20V drain-to-source voltage (Vdss)
35mΩ maximum on-resistance (Rds(on)) at 4.4A, 4.5V
4A continuous drain current (Id) at 25°C
1465pF maximum input capacitance (Ciss) at 10V
Logic level gate with 1.5V maximum gate-to-source threshold voltage (Vgs(th)) at 250μA
21nC maximum gate charge (Qg) at 5V
Operating temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for improved efficiency
Logic level gate for easy interfacing with microcontrollers
Compact 8-TSSOP package for space-constrained applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 35mΩ @ 4.4A, 4.5V
Continuous Drain Current (Id): 4.4A @ 25°C
Input Capacitance (Ciss): 1465pF @ 10V
Gate-to-Source Threshold Voltage (Vgs(th)): 1.5V @ 250μA
Gate Charge (Qg): 21nC @ 5V
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS-compliant and halogen-free
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Power supplies
Motor drives
Switching circuits
Battery management systems
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent efficiency due to low on-resistance
Easy to interface with microcontrollers thanks to logic level gate
Compact 8-TSSOP package for space-constrained designs
Wide operating temperature range for diverse applications
Automotive-grade quality and safety features