Manufacturer Part Number
FDS8433A
Manufacturer
onsemi
Introduction
Power MOSFET transistor
P-channel enhancement mode
Suitable for power switching and control applications
Product Features and Performance
Drain-to-source voltage (Vdss) of 20V
Maximum gate-to-source voltage (Vgs) of ±8V
Low on-resistance (Rds(on)) of 47mΩ @ 5A, 4.5V
Continuous drain current (Id) of 5A at 25°C
Input capacitance (Ciss) of 1130pF @ 10V
Maximum power dissipation of 2.5W at 25°C
Gate charge (Qg) of 28nC @ 5V
Product Advantages
Efficient power switching
Low on-resistance for low power loss
Compact 8-SOIC surface mount package
Key Technical Parameters
MOSFET technology
P-channel enhancement mode
Operating temperature range of -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable performance in a wide temperature range
Compatibility
Suitable for a variety of power switching and control applications
Application Areas
Power supplies
Motor drives
Lighting control
Battery charging circuits
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose
Efficient power switching with low on-resistance
Compact and reliable 8-SOIC package
Wide operating temperature range
Suitable for various power control applications