Manufacturer Part Number
FDS8333C
Manufacturer
onsemi
Introduction
The FDS8333C is a dual N-channel and P-channel power MOSFET array from onsemi. It is part of the PowerTrench series and designed for use in a wide range of power management and switching applications.
Product Features and Performance
Dual N-channel and P-channel MOSFETs in a single package
Low on-resistance (RDS(on)) of 80 mOhm max at 4.1 A and 10 V
High current capability up to 4.1 A continuous drain current
Low gate charge (Qg) of 6.6 nC max at 4.5 V
Logic-level gate drive (Vgs(th) max 3 V at 250 μA)
Wide operating temperature range of -55°C to 150°C
Product Advantages
Compact 8-SOIC package for space-saving designs
Improved power density and efficiency
Simplified circuit design with integrated dual MOSFETs
Suitable for a variety of power management applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30 V
Continuous Drain Current (ID): 4.1 A (at 25°C)
Input Capacitance (Ciss): 282 pF max at 10 V
Gate Charge (Qg): 6.6 nC max at 4.5 V
Quality and Safety Features
Compliant with RoHS and other environmental regulations
Reliable operation in harsh environments
Compatibility
Compatible with a wide range of power management and switching applications
Application Areas
Power supplies
Motor control
Battery management
Industrial and consumer electronics
Product Lifecycle
The FDS8333C is an active product and is currently available for purchase.
Replacements or upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent power efficiency and performance with low on-resistance and gate charge
Integrated dual MOSFET design simplifies circuit implementation
Wide operating temperature range for use in diverse applications
Compact 8-SOIC package for space-saving designs
Reliable and environmentally-friendly construction