FDS6990AS - onsemi

Manufacturer Part Number

FDS6990AS

Manufacturer

onsemi

Introduction

The FDS6990AS is a dual N-channel MOSFET featuring low on-resistance and high current capability in a space-saving SOIC-8 package.

Product Features and Performance

Dual N-channel MOSFET design

30V drain-to-source voltage rating

22mΩ maximum on-resistance at 7.5A, 10V

5A continuous drain current at 25°C

550pF maximum input capacitance at 15V

Logic-level gate voltage threshold

14nC maximum gate charge at 5V

Product Advantages

Compact SOIC-8 package

Low on-resistance for efficient power conversion

High current capability

Logic-level gate drive for easy interfacing

Key Technical Parameters

Drain-to-source voltage (Vdss): 30V

On-resistance (Rds(on)): 22mΩ @ 7.5A, 10V

Continuous drain current (Id): 7.5A @ 25°C

Input capacitance (Ciss): 550pF @ 15V

Gate voltage threshold (Vgs(th)): 3V @ 1mA

Gate charge (Qg): 14nC @ 5V

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

Compatible with standard MOSFET gate drivers and control circuits

Application Areas

Synchronous rectification

DC-DC converters

Motor drives

Power management

General purpose switching

Product Lifecycle

This product is an active and widely available part from onsemi. There are no plans for discontinuation, and replacement/upgrade options are readily available.

Key Reasons to Choose This Product

Compact SOIC-8 package for space-constrained designs

Low on-resistance for efficient power conversion

High current capability for demanding applications

Logic-level gate drive for easy interfacing with control circuits

RoHS3 compliance and AEC-Q101 automotive qualification for reliability