Manufacturer Part Number
FDS6990A
Manufacturer
onsemi
Introduction
The FDS6990A is a dual N-channel PowerTrench MOSFET in an 8-SOIC package. It is designed for a wide range of power management and switching applications.
Product Features and Performance
2 N-Channel MOSFETs in a single package
30V Drain-Source Voltage
18mΩ maximum On-Resistance at 7.5A, 10V
5A continuous drain current at 25°C
1235pF maximum Input Capacitance at 15V
Logic level gate with 3V maximum Gate-Source Threshold Voltage at 250μA
17nC maximum Gate Charge at 5V
Product Advantages
Compact 8-SOIC package for space-saving designs
Low on-resistance for efficient power delivery
Logic-level gate for easy interface with control circuitry
Robust PowerTrench technology for high reliability
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 18mΩ max. @ 7.5A, 10V
Continuous Drain Current (Id): 7.5A @ 25°C
Input Capacitance (Ciss): 1235pF max. @ 15V
Gate-Source Threshold Voltage (Vgs(th)): 3V max. @ 250μA
Gate Charge (Qg): 17nC max. @ 5V
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
The FDS6990A is compatible with a wide range of power management and switching applications, including:
DC-DC converters
Motor drives
Power supplies
Lighting controls
Battery management systems
Application Areas
Power management
Motor control
Lighting control
Battery-powered devices
Industrial automation
Product Lifecycle
The FDS6990A is an active product and is not currently nearing discontinuation. Replacement or upgrade options may be available from onsemi or other manufacturers.
Key Reasons to Choose the FDS6990A
Compact 8-SOIC package for space-saving designs
Efficient power delivery with low on-resistance
Logic-level gate for easy interface with control circuitry
Robust PowerTrench technology for high reliability
Wide operating temperature range of -55°C to 150°C
RoHS3 compliance for environmental sustainability
FDS6990AS MOSAMI Semiconductor/onsemi
FDS6990AS-NLVBSEMI