Manufacturer Part Number
FDS6900AS
Manufacturer
onsemi
Introduction
The FDS6900AS is a dual N-channel power MOSFET transistor designed for high-efficiency power conversion and switching applications.
Product Features and Performance
PowerTrench and SyncFET technology for high efficiency and fast switching
30V drain-to-source voltage rating
27mΩ maximum on-resistance at 6.9A, 10V
9A continuous drain current at 25°C
600pF maximum input capacitance at 15V
Logic-level gate threshold voltage of 3V at 250μA
Product Advantages
Excellent efficiency and thermal performance
Fast switching for high-frequency applications
Low on-resistance for low power loss
Dual configuration for space-saving designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 27mΩ @ 6.9A, 10V
Continuous Drain Current (Id): 6.9A @ 25°C
Input Capacitance (Ciss): 600pF @ 15V
Gate Threshold Voltage (Vgs(th)): 3V @ 250μA
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with -55°C to 150°C operating temperature range
Compatibility
8-SOIC package compatible with standard surface mount assembly processes
Application Areas
Switch-mode power supplies
DC-DC converters
Motor drives
Lighting ballasts
General purpose power switching
Product Lifecycle
Currently in active production
Availability of replacement or upgraded models may change over time, check with manufacturer
Key Reasons to Choose
High efficiency and fast switching for improved power conversion performance
Low on-resistance for reduced power losses and heat generation
Dual configuration for space-saving designs
Reliable operation in harsh environments
FDS6900AS MOSAMI Semiconductor/onsemi