Manufacturer Part Number
FDS6898A
Manufacturer
onsemi
Introduction
The FDS6898A is a dual N-channel MOSFET transistor designed for power management and switching applications.
Product Features and Performance
900mW maximum power dissipation
-55°C to 150°C operating temperature range
20V drain-to-source voltage
14mΩ maximum on-resistance at 9.4A drain current and 4.5V gate voltage
1821pF maximum input capacitance at 10V drain-to-source voltage
23nC maximum gate charge at 4.5V gate voltage
Logic-level gate for easy drive
Product Advantages
High power handling and efficiency
Wide operating temperature range
Low on-resistance for low power loss
Small package size for compact designs
Logic-level gate for easy control
Key Technical Parameters
Power Dissipation: 900mW
Operating Temperature: -55°C to 150°C
Drain-to-Source Voltage: 20V
On-Resistance: 14mΩ
Input Capacitance: 1821pF
Gate Charge: 23nC
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount 8-SOIC package
Application Areas
Power management
Switching circuits
Motor control
Power supplies
Product Lifecycle
This is an active product and is not nearing discontinuation.
Replacements and upgrades are available from onsemi.
Key Reasons to Choose This Product
High power handling and efficiency for demanding applications
Wide operating temperature range for use in diverse environments
Low on-resistance for low power loss and high efficiency
Small package size for compact designs
Logic-level gate for easy control and integration
