Manufacturer Part Number
FDS6689S
Manufacturer
onsemi
Introduction
High-performance power MOSFET with low on-resistance and fast switching speed
Designed for high-frequency, high-efficiency power conversion applications
Product Features and Performance
Low on-resistance of 5.4 mOhm
High drain current capability of 16A
Fast switching speed with low gate charge of 78 nC
Wide operating temperature range of -55°C to 150°C
High drain-to-source voltage rating of 30V
Product Advantages
Excellent power efficiency due to low on-resistance
Improved system reliability and performance
Suitable for high-frequency, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5.4 mOhm
Drain Current (Id): 16A
Input Capacitance (Ciss): 3290 pF
Power Dissipation (Pd): 2.5W
Quality and Safety Features
Robust MOSFET design for reliable operation
Compliance with relevant safety standards
Compatibility
Surface mount package (8-SOIC)
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Power amplifiers
Automotive electronics
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrade options available if required
Several Key Reasons to Choose This Product
Excellent power efficiency and high current capability
Fast switching speed for high-frequency operation
Wide operating temperature range for versatile applications
Robust and reliable MOSFET design for long-term performance
FDS6688S-NLVBSEMI