Manufacturer Part Number
FDS6688S
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET with low on-resistance
Product Features and Performance
Low on-resistance (RDS(on) = 6 mΩ @ 16 A, 10 V)
High current capability (16 A continuous drain current at 25°C)
Low gate charge (Qg = 78 nC @ 10 V)
Wide operating temperature range (-55°C to +175°C)
Fast switching speed
Minimal gate-to-source and gate-to-drain charge
Stable electrical parameters over temperature
Product Advantages
Excellent efficiency and power density
Reduced power losses
Improved thermal management
Enhanced system reliability
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Gate to Source Voltage (Vgs): ±20 V
On-Resistance (RDS(on)): 6 mΩ @ 16 A, 10 V
Drain Current (ID): 16 A (continuous at 25°C)
Input Capacitance (Ciss): 3290 pF @ 15 V
Power Dissipation (Pd): 2.5 W (at 25°C)
Quality and Safety Features
Compliant with RoHS and REACH directives
Excellent reliability and ruggedness
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Switch-mode power supplies
Motor drives
DC-DC converters
Backup power systems
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options may be available in the future.
Key Reasons to Choose This Product
Excellent efficiency and power density
Low on-resistance for reduced power losses
Wide operating temperature range for improved system reliability
Fast switching speed for enhanced performance
Compatibility with a wide range of power management and control applications
FDS6688S-NLVBSEMI