FDS6688S - onsemi

Manufacturer Part Number

FDS6688S

Manufacturer

onsemi

Introduction

High-performance N-channel power MOSFET with low on-resistance

Product Features and Performance

Low on-resistance (RDS(on) = 6 mΩ @ 16 A, 10 V)

High current capability (16 A continuous drain current at 25°C)

Low gate charge (Qg = 78 nC @ 10 V)

Wide operating temperature range (-55°C to +175°C)

Fast switching speed

Minimal gate-to-source and gate-to-drain charge

Stable electrical parameters over temperature

Product Advantages

Excellent efficiency and power density

Reduced power losses

Improved thermal management

Enhanced system reliability

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Gate to Source Voltage (Vgs): ±20 V

On-Resistance (RDS(on)): 6 mΩ @ 16 A, 10 V

Drain Current (ID): 16 A (continuous at 25°C)

Input Capacitance (Ciss): 3290 pF @ 15 V

Power Dissipation (Pd): 2.5 W (at 25°C)

Quality and Safety Features

Compliant with RoHS and REACH directives

Excellent reliability and ruggedness

Compatibility

Suitable for a wide range of power management and control applications

Application Areas

Switch-mode power supplies

Motor drives

DC-DC converters

Backup power systems

Industrial and consumer electronics

Product Lifecycle

This product is currently in production and is not nearing discontinuation.

Replacement or upgrade options may be available in the future.

Key Reasons to Choose This Product

Excellent efficiency and power density

Low on-resistance for reduced power losses

Wide operating temperature range for improved system reliability

Fast switching speed for enhanced performance

Compatibility with a wide range of power management and control applications