Manufacturer Part Number
FDP6030BL
Manufacturer
onsemi
Introduction
High-performance MOSFET transistor with low on-resistance and high current handling capability.
Product Features and Performance
N-channel MOSFET design
Low on-resistance (18 mΩ max at 20 A, 10 V)
High continuous drain current (40 A at 25°C)
Wide operating temperature range (-65°C to 175°C)
Fast switching speed
Low gate charge (17 nC max at 5 V)
High drain-to-source breakdown voltage (30 V)
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable high-current operation
Wide temperature range for diverse applications
Fast switching for improved circuit performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Gate-to-Source Voltage (Vgs): ±20 V
Continuous Drain Current (Id): 40 A at 25°C
On-Resistance (Rds(on)): 18 mΩ max at 20 A, 10 V
Gate Charge (Qg): 17 nC max at 5 V
Power Dissipation (Pd): 60 W at 25°C
Quality and Safety Features
RoHS3 compliant
Reliable through-hole TO-220-3 package
Compatibility
Compatible with a wide range of electronic circuits and power supplies that require a high-performance MOSFET.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power amplifiers
Industrial and automotive electronics
Product Lifecycle
The FDP6030BL is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power conversion
Wide operating temperature range for use in diverse environments
Fast switching speed for improved circuit performance
Reliable through-hole package for secure mounting
RoHS3 compliance for environmental responsibility
