Manufacturer Part Number
FDP5N60NZ
Manufacturer
onsemi
Introduction
High-performance power MOSFET transistor for a wide range of power electronics applications
Product Features and Performance
600V N-Channel MOSFET
Low on-resistance (RDS(on) = 2Ω)
High current capability (ID = 4.5A at 25°C)
Low input capacitance (Ciss = 600pF)
Wide operating temperature range (-55°C to 150°C)
Robust and reliable design
Product Advantages
Efficient power conversion and control
Suitable for high-voltage, high-current applications
Excellent thermal characteristics
Reliable and durable performance
Key Technical Parameters
Drain-Source Voltage (VDS): 600V
Gate-Source Voltage (VGS): ±25V
On-Resistance (RDS(on)): 2Ω @ 2.25A, 10V
Continuous Drain Current (ID): 4.5A at 25°C
Input Capacitance (Ciss): 600pF @ 25V
Power Dissipation (PD): 100W at 25°C
Quality and Safety Features
RoHS3 compliant
Automotive-grade quality and reliability
Compatibility
Through-hole mounting (TO-220-3 package)
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Induction heating
Industrial and consumer electronics
Product Lifecycle
Current production
Replacements and upgrades available
Key Reasons to Choose This Product
High efficiency and power density
Reliable and robust performance
Wide operating temperature range
Suitable for high-voltage, high-current applications
Easy to integrate into power electronics designs
