Manufacturer Part Number
FDP12N50
Manufacturer
onsemi
Introduction
The FDP12N50 is a high-voltage, high-current N-Channel MOSFET transistor suitable for a wide range of power conversion and control applications.
Product Features and Performance
High voltage rating of 500V
Low on-resistance of 650mΩ (max) at 6A, 10V
Continuous drain current of 11.5A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 30nC (max) at 10V
Robust design with high power dissipation of 165W
Product Advantages
Excellent efficiency and low power loss
Reliable and rugged design
Versatile in power conversion applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 650mΩ (max) at 6A, 10V
Continuous Drain Current (Id): 11.5A at 25°C
Input Capacitance (Ciss): 1315pF (max) at 25V
Power Dissipation: 165W
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for secure and reliable mounting
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Appliances
Industrial equipment
Product Lifecycle
The FDP12N50 is an active product and is not nearing discontinuation.
Replacements and upgrades may be available from onsemi or other manufacturers.
Key Reasons to Choose This Product
High voltage and current capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range
Fast switching for high-frequency applications
Robust and reliable design
Versatile in multiple power electronics applications
